FMMT560Q transistor equivalent, 500v pnp high voltage transistor.
* BVCEO > -500V
* IC = -150mA high Continuous Collector Current
* ICM Up to -500mA Peak Pulse Current
* Excellent hFE Characteristics up to IC = -100mA
Features
* BVCEO > -500V
* IC = -150mA high Continuous Collector Current
* ICM Up to -500mA Peak Pulse Curr.
This bipolar junction transistor (BJT) has been designed to meet the stringent requirements of automotive applications.
Features
* BVCEO > -500V
* IC = -150mA high Continuous Collector Current
* ICM Up to -500mA Peak Pulse Current
* E.
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