BVDSS 30V RDS(ON) Max 3.8mΩ @ VGS = 10V 6mΩ @ VGS = 4.5V ID Max TC = +25°C 140A 110A Description and Applications This MOSFET is designed to minimize the on-state res.

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, makin.

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* Backlighting
* Power management functions.

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