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DMT3003LFG - N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low RDS(ON).
  • Ensures On-State Losses are Minimized.
  • Excellent QGD × RDS(ON) Product (FOM).
  • Advanced Technology for DC-DC Converts.
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product.
  • 100% UIS (Avalanche) Rated.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q10.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green DMT3003LFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 3.2mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V ID Max TC = +25°C 100A 85A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent QGD × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converts  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product  100% UIS (Avalanche) Rated  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.