DMT10H032LFDF mosfet equivalent, 100v n-channel mosfet.
* 0.6mm Profile
– Ideal for Low Profile Applications
* PCB Footprint of 4mm2
* Low On-Resistance
* 100% Unclamped Inductive Switching (UIS.
Features and Benefits
* 0.6mm Profile
– Ideal for Low Profile Applications
* PCB Footprint of .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features and Benefits
* 0.6mm Profile
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