BVDSS 100V RDS(ON) Max 3mΩ @ VGS = 10V 5mΩ @ VGS = 6V ID Max TC = +25°C 152A 118A Description and Applications This MOSFET is designed to minimize the on-state resist.

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, makin.

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* 100% Unclamped Inductive Switching (UIS) Tes.

DMT10H009LCG

DMT10H009LFG

DMT10H009LK3

DMT10H009LPS

DMT10H009LSS

DMT10H009SCG

DMT10H009SK3

DMT10H009SPS

DMT10H009SSS

DMT10H010LCT

DMT10H010LK3

DMT10H010LPS

DMT10H010LSS

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