* N-Channel MOSFET
* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage.

Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior .

and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Case: SOT23
.

DMN53D0L

DMN53D0LDW

DMN53D0LDWQ

DMN53D0LQ

DMN53D0LT

DMN53D0LV

DMN53D0LW

DMN5010VAK

DMN5040LSS

DMN55D0UT

DMN5L06

DMN5L06DMK

DMN5L06DMKQ

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