DMN53D0L transistor equivalent, n-channel enhancement mode field effect transistor.
* N-Channel MOSFET
* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage.
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance,.
and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
SOT23
Mechanical Data
* Package: SOT23 <.
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