DMN2710UFB mosfet equivalent, n-channel mosfet.
* Footprint of Just 0.6mm2—13 Times Smaller Than SOT23
* Low Gate Threshold Voltage
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & .
requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 1694.
and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
* Portable Electronics
Mechanical D.
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