DMN2710UV Datasheet | Diodes Incorporated

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.45Ω @VGS = 4.5V 0.6Ω @VGS = 2.5V ID @TA = +25°C 0.92A 0.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits - Low On-Resistance - Low Gate Threshold Voltage VGS(TH) < 1V - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Ultra-Small Surface Mount Package - ESD Protected Gate - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For...