* Low On-Resistance
* Low Gate Threshold Voltage VGS(TH) < 1V
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Sm.

Features and Benefits
* Low On-Resistance
* Low Gate Threshold Voltage VGS(TH) < 1V
* Low Input Capacitanc.

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits
* Low On-Resistance <.

DMN2710UDW

DMN2710UDWQ

DMN2710UFB

DMN2710UT

DMN2004DMK

DMN2004DWK

DMN2004DWKQ

DMN2004K

DMN2004TK

DMN2004VK

DMN2004WK

DMN2004WKQ

DMN2005DLP4K

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts