* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface M.

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, m.

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* Battery Charging
* Power Management F.

DMN2400UFB4

DMN2400UFD

DMN2400UFDQ

DMN2400UV

DMN24H11DS

DMN24H11DSQ

DMN24H3D5L

DMN2004DMK

DMN2004DWK

DMN2004DWKQ

DMN2004K

DMN2004TK

DMN2004VK

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