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DMN2400UFDQ - N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Power Management Functions Battery Operated Systems and Solid-State Relays Load

Key Features

  • Low On-Resistance.
  • Very low Gate Threshold Voltage, 1.0V Max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: U-DFN1212-3.
  • Case Material: Molded Plastic; UL Flammabilit.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN2400UFDQ N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 20V RDS(ON) 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1.0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V ID TA = +25°C 0.9A 0.7A 0.5A 0.3A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Power Management Functions  Battery Operated Systems and Solid-State Relays  Load Switch Features and Benefits  Low On-Resistance  Very low Gate Threshold Voltage, 1.0V Max.  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.