DMN2011UFDF datasheet, mosfet equivalent, Diodes

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DMN2011UFDF Datasheet

Features and benefits

* 0.6mm Profile
– Ideal for Low Profile Applications
* PCB Footprint of 4mm2
* Low Gate Threshold Voltage
* Low On-Resistance
* ESD Pr.

Application

DMN2011UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features
* 0.6mm Profile
– Ideal for Low Profile.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DMN2011UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFE.

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