* Low On-Resistance
* Very Low Gate Threshold Voltage VGS(TH), 1.0V max
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Tota.

Applications
* DC-DC Converters
* Power management functions Features
* Low On-Resistance
* Very Low G.

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications
* DC-DC Converters
* Po.

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