DMN1002UCA6 - N-CHANNEL MOSFET

Diodes Incorporated

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

CSP with Footprint 3.05mm × 1.77mm.
Height = 0.11mm for Low Profile.
ESD Protection of Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

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DMN1002UCA6 n-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN1002UCA6
Manufacturer	Diodes Incorporated
File Size	453.81 KB
Description	N-CHANNEL MOSFET
Datasheet	DMN1002UCA6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVSSS 12V RSS(ON) Typ 2.36mΩ @ VGS = 3.8V IS Max TA = +25°C 24.4A Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  CSP with Footprint 3.05mm × 1.77mm  Height = 0.11mm for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.