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3N212 - DUAL GATE MOSFET VHF AMPLIFIER

Download the 3N212 datasheet PDF. This datasheet also covers the 3N211 variant, as both devices belong to the same dual gate mosfet vhf amplifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
  • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (3N211-DigitronSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 3N212
Manufacturer Digitron Semiconductors
File Size 335.35 KB
Description DUAL GATE MOSFET VHF AMPLIFIER
Datasheet download datasheet 3N212 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
3N212 Dual Gate Mosfet VHF Amplifier(N-Channel/ Depletion) Motorola Inc
3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECTTRANSISTORS ETC
3N211 Dual Gate Mosfet VHF Amplifier(N-Channel/ Depletion) Motorola Inc
3N213 Dual Gate Mosfet VHF Amplifier(N-Channel/ Depletion) Motorola Inc
3N200 SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR Intersil Corporation

Other Datasheets by Digitron Semiconductors

Part Number Description
3N210 DUAL GATE MOSFET VHF AMPLIFIER
3N211 DUAL GATE MOSFET VHF AMPLIFIER
3N213 DUAL GATE MOSFET VHF AMPLIFIER
3N201 DUAL GATE MOSFET VHF AMPLIFIER
3N202 DUAL GATE MOSFET VHF AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
3N211-3N213 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET VHF AMPLIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage Drain Current Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Lead Temperature, 1/16” from Seated Surface for 10 seconds Junction Temperature Range Storage Temperature Range Symbol VDS VDG1 VDG2 ID IG1 IG2 PD PD TL TJ Tstg 3N211 3N212 3N213 27 35 35 40 35 40 50 ±10 ±10 360 2.4 1.2 8.