Datasheet Details
| Part number |
3N210
|
| Manufacturer |
Unknown Manufacturer |
| File Size |
720.37 KB |
| Description |
N-CHANNEL DUAL GATE MOS FIELD EFFECTTRANSISTORS |
| Datasheet |
 3N210 Datasheet
|
|
|
Full PDF Text Transcription for 3N210 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
3N210. For precise diagrams, and layout, please refer to the original PDF.
3N209 (SILICON) 3N210 N·CHANNEL DUAL·GATE SILlCON·NITRIDE PASSIVATED MOS FIELD·EFFECT TRANSISTORS · .. depletion mode dual gate transistors designed and characterized for...
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.. depletion mode dual gate transistors designed and characterized for UHF communications applications • Two Packages OfferedHermetic Metal TO· 72 - 3N209 Micro-H Plastic - 3N21 0 • Silicon Nitride Passivation for Excellent Long Term Stability • Zener Diode Protected Gates • Third Order Intermodulation Distortion Curve Provided • Common Source Power GainGps = 10 dB (Min) @f = 500 MHz • Noise Figure - 6.
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