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DS1645AB - Partitionable 1024K NV SRAM

Download the DS1645AB datasheet PDF (DS1645Y included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for partitionable 1024k nv sram.

Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Directly replaces 128K x 8 volatile static RAM.
  • Write protects selected blocks of memory when pro- grammed.
  • Unlimited write cycles.
  • Low.
  • power CMOS.
  • Read and write access times as fast as 70 ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DS1645Y-DallasSemiconducotr.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DS1645AB
Manufacturer Dallas Semiconducotr
File Size 102.17 KB
Description Partitionable 1024K NV SRAM
Datasheet download datasheet DS1645AB Datasheet

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Full PDF Text Transcription

Click to expand full text
DS1645Y/AB DS1645Y/AB Partitionable 1024K NV SRAM FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM • Write protects selected blocks of memory when pro- grammed • Unlimited write cycles • Low–power CMOS • Read and write access times as fast as 70 ns • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time • Full +10% VCC operating range (DS1645Y) • Optional +5% VCC operating range (DS1645AB) • Optional industrial temperature range of –40°C to +85°C, designated IND • JEDEC standard 32–pin DIP package • Low Profile Module (LPM) package – Fits into standard 68–pin PLCC surface mountable socket – 250 mil packag
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