DXTN10060DFJBQ datasheet, transistor equivalent, DIODES

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Features and benefits

* BVCEO > 60V
* IC = 4A Continuous Collector Current
* Low Saturation Voltage (100mV Max @1A)
* RSAT = 60mΩ for a Low Equivalent On-Resistance
* hFE S.

Application

where power density is of utmost importance. Features
* BVCEO > 60V
* IC = 4A Continuous Collector Current
*.

Description

Advanced process capability has been used to maximise the performance of this 60V, NPN transistor. The U-DFN2020-3 (Type B) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is o.

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