DXTN10060DFJBWQ Datasheet | Diodes Incorporated

60V NPN LOW SATURATION TRANSISTOR Description Advanced process capability has been used to maximise the performance of this 60V, NPN transistor. The W-DFN2020-3/SWP (Type A) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance. Features - BVCEO > 60V - IC = 4A Continuous Collector Current - Low Saturation Voltage (100mV Max @1A) - RSAT = 60mΩ for a Low Equivalent On-Resistance - hFE Specified up to 6A for High Current Gain Hold Up - Tighter Gain Specification - Low Profile 0.62mm High Package for Thin Applications - Sidewall Tin Plating for Wettable Flanks in AOI - RJA Efficient,...