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DXTN10060DFJBWQ Datasheet 60V NPN TRANSISTOR

Manufacturer: Diodes Incorporated

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General Description

Advanced process capability has been used to maximise the performance of this 60V, NPN transistor.

The W-DFN2020-3/SWP (Type A) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance.

Overview

DXTN10060DFJBWQ 60V NPN LOW SATURATION TRANSISTOR.

Key Features

  • BVCEO > 60V.
  • IC = 4A Continuous Collector Current.
  • Low Saturation Voltage (100mV Max @1A).
  • RSAT = 60mΩ for a Low Equivalent On-Resistance.
  • hFE Specified up to 6A for High Current Gain Hold Up.
  • Tighter Gain Specification.
  • Low Profile 0.62mm High Package for Thin.

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