DMN31D5UDW mosfet equivalent, dual n-channel mosfet.
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface-M.
Features and Benefits
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Features and Benefits
* Low On-Resistance
* .
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