DMN313DLT Datasheet | Diodes Incorporated

NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) 2Ω @ VGS = 4V 3.2Ω @ VGS = 2.5V ID TA = 25°C 270m A 210m A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - Backlighting - DC-DC Converters - Power management functions Features and Benefits - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Lead Free By Design/Ro HS pliant (Note 1) - ESD Protected up to 2k V - "Green" Device (Note 2) - Qualified to AEC-Q101 Standards for High Reliability Mechanical Data - Case: SOT-523 - Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 - Terminal Connections: See...