DMC2710UV Datasheet, DIODES

* Low On-Resistance
* Low Gate Threshold Voltage N-Channel: VGS(TH) < 1V P-Channel: VGS(TH) < -1V
* Low Input Capacitance
* Fast Switching Speed
* Low.

Features and Benefits
* Low On-Resistance
* Low Gate Threshold Voltage N-Channel: VGS(TH) < 1V P-Channel: VGS(.

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits
* Low On-Resistance
* .