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DMC2710UVQ - MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Battery operated systems and solid-state relays Drivers: relays, solenoids, la

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage N-Channel: VGS(TH) < 1V P-Channel: VGS(TH) < -1V.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Complementary Pair MOSFET.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DIODES™ DMC2710UVQ is suitable for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCED INFORMATION DMC2710UVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 Q2 BVDSS 20V -20V RDS(ON) 0.4Ω @ VGS = 4.5V 0.5Ω @ VGS = 2.5V 0.7Ω @ VGS = -4.5V 0.9Ω @ VGS = -2.5V ID @TA = +25°C 1.1A 1.0A -0.8A -0.7A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.