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MTE05N08F7T - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 80V 172A 2.7mΩ Symbol MTE05N08F7T Outline TO-263-7L-4C G:Gate D:Drain S:Source Ordering Information Device MTE05N08F7T-0-T7-X Package Shipping TO-263-7L-4C (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green comp.

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Datasheet Details

Part number MTE05N08F7T
Manufacturer Cystech Electonics
File Size 479.59 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE05N08F7T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE05N08F7T Spec. No. : C918F7T Issued Date : 2017.01.03 Revised Date : Page No. : 1/9 Features • Simple Drive Requirement • Fast Switching Characteristic • RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 80V 172A 2.