MTE050N10KRJ3 - N -Channel Enhancement Mode Power MOSFET

Product Overview

Cystech Electonics

Part number	MTE050N10KRJ3
Manufacturer	Cystech Electonics
File Size	451.43 KB
Description	N -Channel Enhancement Mode Power MOSFET
Datasheet	MTE050N10KRJ3 Datasheet
Additional preview pages of the MTE050N10KRJ3 datasheet.

Low Gate Charge.
Simple Drive Requirement.
ESD protected gate.
Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=10A 100V 13A 55.5mΩ(TYP) Equivalent Circuit MTE050N10KRJ3 Outline TO-252(DPAK) G DS G：Gate D：Drain S：Source Ordering Information Device MTE050N10KRJ3-0-T3-G Package Shipping TO-252 (Pb-free lead plating & Halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS complian.

📁 Similar Datasheet

MTE030N15RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTE100N10KRH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)
MTE1011P - Metal Can Infrarred Emitter (Marktech Corporate)
MTE1040 - INFRARED LED (Marktech Corporate)
MTE1050A - INFRARED LED (Marktech Corporate)
MTE1070A - INFRARED LED (Marktech Corporate)
MTE1080 - INFRARED LED (Marktech Corporate)
MTE108CL - INFRAED EMITTER (Marktech Corporate)

Other Datasheets by Cystech Electonics

Published: Nov 4, 2024 |