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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 1/4
BTD2097AI3
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics www.DataSheet4U.com • Complementary to BTB1412AI3
Symbol
BTD2097AI3
Outline
TO-251
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd@ TA=25℃ Pd@ TC=25℃ Tj Tstg Limits 50 20 6 5 10 1 10 150 -55~+150 Unit V V V *1 *2 A W °C °C
Note : *1. Single Pulse , Pw≦380µs,Duty≦2%. *2.
BTD2097AI3 Datasheet
