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BTD2098N3 - NPN Epitaxial Planar Transistor

Features

  • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A.
  • Excellent DC current gain characteristics www. DataSheet4U. com.
  • Complementary to BTB1386N3 Symbol BTD2098N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage T.

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Datasheet Details

Part number BTD2098N3
Manufacturer Cystech Electonics
File Size 201.53 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2098N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 1/4 BTD2098N3 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics www.DataSheet4U.com • Complementary to BTB1386N3 Symbol BTD2098N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Single Pulse Pw≦350µs, Duty≦2%.
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