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BTC2411N3 - Gentral Purpose NPN Epitaxial Planar Transistor

Datasheet Summary

Description

The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application.

High IC(Max), IC(Max) = 0.6A.

Low VCE(sat) , Typ.

VCE(sat) = 0.4V at IC/IB = 500mA/50mA.

Optimal for low Voltage operation.

Complementary to BTA1036N

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Datasheet preview – BTC2411N3

Datasheet Details

Part number BTC2411N3
Manufacturer Cystech Electonics
File Size 313.52 KB
Description Gentral Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2411N3 Datasheet
Additional preview pages of the BTC2411N3 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2005.03.09 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2411N3 Description • The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High IC(Max), IC(Max) = 0.6A. • Low VCE(sat) , Typ. VCE(sat) = 0.4V at IC/IB = 500mA/50mA. Optimal for low Voltage operation. • Complementary to BTA1036N3.
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