FM28V102A memory equivalent, 1-mbit (64 k x 16) f-ram memory.
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Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature:
–40 C to +85 C 44-pin thin small outline package (TS.
requiring frequent or rapid writes. The device is available in a 400-mil 44-pin TSOP-II surface mount package. Device sp.
Address inputs: The 16 address lines select one of 64K words in the F-RAM array. The lowest two address lines A1
–A0 may be used for page mode read and write operations. Write Enable: A write cycle begins when WE is asserted. The risin.
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