Datasheet Summary
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Preliminary
1Mbit Bytewide F-RAM Memory Features
1Mbit Ferroelectric Nonvolatile RAM
- Organized as 128Kx8
- High Endurance 100 Trillion (1014) Read/Writes
- NoDelay™ Writes
- Page Mode Operation to 33MHz
- Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
- No battery concerns
- Monolithic reliability
- True surface mount solution, no rework steps
- Superior for moisture, shock, and vibration SRAM Replacement
- JEDEC 128Kx8 SRAM pinout
- 60 ns Access Time, 90 ns Cycle Time Low Power Operation
- 2.0V
- 3.6V Power Supply
- Standby Current 90 µA (typ)
- Active Current 7 mA (typ) Industry Standard Configurations
- Industrial...
