CY7C2268KV18/CY7C2270KV18
36-Mbit DDR II+ SRAM Two-Word
Burst Architecture (2.5 Cycle Read Latency) with ODT
36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Features
■ 36-Mbit density (2 M × 18, 1 M × 36)
■ 550 MHz clock for high bandwidth
■ Two-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces (data transferred at
1100 MHz) at 550 MHz
■ Available in 2.5 clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ On-die termination (ODT) feature
❐ Supported for D[x:0], BWS[x:0], and K/K inputs
■ Synchronous internally self-timed writes
■ DDR II+ operates with 2.5 cycle read latency when DOFF is
asserted HIGH
■ Operates similar to DDR I device with 1 cycle read latency when
DOFF is asserted LOW
■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD[1]
❐ Supports both 1.5 V and 1.8 V I/O supply
■ HSTL inputs and variable drive HSTL output buffers
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase-locked loop (PLL) for accurate data placement
Configurations
With Read Cycle Latency of 2.5 Cycles:
CY7C2268KV18 – 2 M × 18
CY7C2270KV18 – 1 M × 36
Functional Description
The CY7C2268KV18, and CY7C2270KV18 are 1.8 V
synchronous pipelined SRAMs equipped with DDR II+
architecture. The DDR II+ consists of an SRAM core with
advanced synchronous peripheral circuitry. Addresses for read
and write are latched on alternate rising edges of the input (K)
clock. Write data is registered on the rising edges of both K and
K. Read data is driven on the rising edges of K and K. Each
address location is associated with two 18-bit words
(CY7C2268KV18), or 36-bit words (CY7C2270KV18) that burst
sequentially into or out of the device.
These devices have an on-die termination feature supported for
D[x:0], BWS[x:0], and K/K inputs, which helps eliminate external
termination resistors, reduce cost, reduce board area, and
simplify board routing.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs D) are tightly matched to the two
output echo clocks CQ/CQ, eliminating the need for separately
capturing data from each individual DDR SRAM in the system
design.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
For a complete list of related documentation, click here.
Selection Guide
Maximum operating frequency
Maximum operating current
Description
× 18
× 36
550 MHz
550
700
890
450 MHz 400 MHz Unit
450 400 MHz
600 Not Offered mA
Not Offered 690
Note
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support VDDQ = 1.4 V to VDD.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-57845 Rev. *H
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 23, 2015
