Datasheet Summary
CY7C2168KV18/CY7C2170KV18
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Features
- 18-Mbit density (1M × 18, 512K × 36)
- 550-MHz clock for high bandwidth
- Two-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces (data transferred at
1100 MHz) at 550 MHz
- Available in 2.5 clock cycle latency
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Data valid pin (QVLD) to indicate valid data on the output
- On-die termination (ODT) feature
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