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Cypress Semiconductor Electronic Components Datasheet

CY7C196 Datasheet

(CY7C194 - CY7C196) 64K x 4 Static RAM

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96
CY7C194
CY7C195
CY7C196
64K x 4 Static RAM
Features
• High speed
— 12 ns
• Output enable (OE) feature (7C195 and 7C196)
• CMOS for optimum speed/power
• Low active power
— 880 mW
• Low standby power
— 220 mW
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The CY7C194, CY7C195, and CY7C196 are high-perfor-
mance CMOS static RAMs organized as 65,536 by 4 bits.
Easy memory expansion is provided by active LOW Chip En-
able(s) (CE on the CY7C194 and CY7C195, CE1, CE2 on the
CY7C196) and three-state drivers. They have an automatic
power-down feature, reducing the power consumption by 75%
when deselected.
Writing to the device is accomplished when the Chip Enable(s)
(CE on the CY7C194 and CY7C195, CE1, CE2 on the
CY7C196) and Write Enable (WE) inputs are both LOW. Data
on the four input pins (I/O0 through I/O3) is written into the
memory location, specified on the address pins (A0 through
A15).
Reading the device is accomplished by taking the Chip En-
able(s) (CE on the CY7C194 and CY7C195, CE1, CE2 on the
CY7C196) LOW, while Write Enable (WE) remains HIGH. Un-
der these conditions the contents of the memory location
specified on the address pins will appear on the four data I/O
pins.
A die coat is used to ensure alpha immunity.
Logic Block Diagram
INPUT BUFFER
A1
A2
A3
A4
A5
AA67
1024 x 64 x 4
ARRAY
A8
A9
A10
Pin Configurations
DIP/SOJ
Top View
DIP/SOJ
Top View
A6 1
24 VCC
NC 1
28 VCC
A7 2
23 A5
A6 2
27 A5
A8 3
A9 4
22 A4
21 A3
A7 3
A8 4
26 A4
25 A3
A10 5
20 A2
A9 5
24 A2
A11 6 7C194 19
A12 7
18
A13 8
17
A14 9
16
A1
A0
I/O3
I/O2
A10
A11
6
7
7C195
7C196
23
22
A1
A0
A12 8
21 NC
A13 9
20
CE2
(7C196)
A15 10
CE 11
15 I/O1
14 I/O0
A14 10
A15 11
19 I/O3
18 I/O2
NC
(7C195)
I/O3
GND 12
13 WE
CE1 12
17 I/O1
OE 13
16 I/O0
I/O2
C194-2
GND 14
15 WE
C194-3
I/O1
I/O0
COLUMN
DECODER
POWER
DOWN
CE2 (7C196 only)
CE1
WE
(OE)
(7C195 and
7C196 ONLY)
C194-1
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
7C194-12
7C195-12
7C196-12
12
155
30
7C194-15
7C195-15
7C196-15
15
145
30
7C194-20
7C195-20
7C196-20
20
135
30
7C194-25
7C195-25
7C196-25
25
115
30
7C194-35
7C195-35
7C196-35
35
115
30
7C194-45
7C196-45
45
30
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05162 Rev. **
Revised September 18, 2001


Cypress Semiconductor Electronic Components Datasheet

CY7C196 Datasheet

(CY7C194 - CY7C196) 64K x 4 Static RAM

No Preview Available !

CY7C194
CY7C195
CY7C196
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage to Ground Potential ............... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ....................................0.5V to VCC + 0.5V
DC Input Voltage[1] ................................0.5V to VCC + 0.5V
Electrical Characteristics Over the Operating Range
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Commercial
Ambient
Temperature[2]
0°C to +70°C
VCC
5V ± 10%
]
7C194-12
7C195-12
7C196-12
7C194-15
7C195-15
7C196-15
Parameter
Description
Test Conditions
Min. Max. Min. Max.
VOH
VOL
VIH
VIL[1]
IIX
IOZ
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage
Current
VCC = Min., IOH = 4.0 mA
VCC = Min., IOL = 8.0 mA
GND < VI < VCC
GND < VO < VCC,
Output Disabled
2.4 2.4
0.4 0.4
2.2 VCC 2.2 VCC
+ 0.3V
+ 0.3V
0.5 0.8 0.5 0.8
5 +5 5 +5
5 +5 5 +5
IOS
Output Short
Circuit Current[3]
VCC = Max.,
VOUT = GND
ICC VCC Operating
Supply Current
VCC=Max., IOUT=0 mA,
f=fMAX =1/tRC
ISB1 Automatic CE
Max. VCC, CE1,2 > VIH,
Power-Down Current
TTL Inputs[4]
VIN > VIH or VIN < VIL, f = fMAX
300
155
30
300
145
30
ISB2 Automatic CE
Max. VCC, CE1,2 > VCC - 0.3V,
Power-Down Current
CMOS Inputs[4]
VIN > VCC - 0.3V or
VIN < 0.3V, f = 0
10
Notes:
1. Minimum voltage is equal to 2.0V for pulse durations of less than 20 ns.
2. TA is the Instant Oncase temperature.
3. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.
10
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
Document #: 38-05162 Rev. **
Page 2 of 12


Part Number CY7C196
Description (CY7C194 - CY7C196) 64K x 4 Static RAM
Maker Cypress Semiconductor
PDF Download

CY7C196 Datasheet PDF






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