This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | CY7C1916CV18 |
|---|---|
| Datasheet | CY7C1916CV18 CY7C1316CV18 Datasheet (PDF) |
| File Size | 718.02 KB |
| Manufacturer | Cypress (now Infineon) |
| Description | (CY7C1xxxCV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
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The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K.
See all Cypress (now Infineon) datasheets
| Part Number | Description |
|---|---|
| CY7C1916BV18 | 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1916JV18 | 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1916KV18 | 18-Mbit DDR II SRAM Two-Word Burst Architecture |
| CY7C1910BV18 | 1.8V Synchronous Pipelined SRAM |
| CY7C1911BV18 | (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture |
| CY7C1911CV18 | (CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture |
| CY7C1911JV18 | (CY7C1x1xJV18) 18-Mbit QDR II SRAM 4-Word Burst Architecture |
| CY7C1911KV18 | 18-Mbit QDR II SRAM Four-Word Burst Architecture |
| CY7C1917BV18 | 1.8V Synchronous Pipelined SRAM |
| CY7C191xBV18 | (CY7C1xxxxVxx) RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata |
