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CY7C1911CV18 Datasheet

Manufacturer: Cypress (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

CY7C1911CV18 datasheet preview

Datasheet Details

Part number CY7C1911CV18
Datasheet CY7C1911CV18 CY7C1311CV18 Datasheet (PDF)
File Size 731.88 KB
Manufacturer Cypress (now Infineon)
Description (CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1911CV18 page 2 CY7C1911CV18 page 3

CY7C1911CV18 Overview

QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations.

CY7C1911CV18 Key Features

  • 2M x 8 CY7C1911CV18
  • 2M x 9 CY7C1313CV18
  • 1M x 18 CY7C1315CV18
  • 512K x 36
  • Supports concurrent transactions 300 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double
Cypress (now Infineon) logo - Manufacturer

More Datasheets from Cypress (now Infineon)

See all Cypress (now Infineon) datasheets

Part Number Description
CY7C1911BV18 (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1911JV18 (CY7C1x1xJV18) 18-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1911KV18 18-Mbit QDR II SRAM Four-Word Burst Architecture
CY7C1910BV18 1.8V Synchronous Pipelined SRAM
CY7C1916BV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1916CV18 (CY7C1xxxCV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1916JV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1916KV18 18-Mbit DDR II SRAM Two-Word Burst Architecture
CY7C1917BV18 1.8V Synchronous Pipelined SRAM
CY7C191xBV18 (CY7C1xxxxVxx) RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata

CY7C1911CV18 Distributor

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