CY7C1910BV18 Overview
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 18-Mbit QDR™-II SRAM 2-Word Burst Architecture.
CY7C1910BV18 Key Features
- Separate independent read and write data ports
- Supports concurrent transactions
- 250 MHz clock for high bandwidth
- 2-word burst on all accesses
- Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 500 MHz) at 250 MHz
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Single multiplexed address input bus latches address inputs for both read and write ports