CY7C1526V18, CY7C1511V18 - (CY7C15xxV18) SRAM 4-Word Burst Architecture

Cypress Semiconductor

The CY7C1526V18 by Cypress Semiconductor is a (CY7C15xxV18) SRAM 4-Word Burst Architecture. Below is the official datasheet preview.

Datasheet Details

Part number	CY7C1526V18, CY7C1511V18
Manufacturer	Cypress Semiconductor
File Size	561.73 KB
Description	(CY7C15xxV18) SRAM 4-Word Burst Architecture
Datasheet	CY7C1511V18_CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C1526V18, CY7C1511V18. Please refer to the document for exact specifications by model.
Additional preview pages of the CY7C1526V18 datasheet.

The CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture.

Separate Independent Read and Write Data Ports.
Supports concurrent transactions.
250-MHz Clock for High Bandwidth.
4-Word Burst for reducing address bus frequency.
Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Two output clocks (C and C) accounts for clock skew and flight time mismatchi.

📁 CY7C1526V18 Similar Datasheet

CY7C1006D - 1-Mbit (256K x 4) Static RAM (Cypress)
CY7C1011G - 2-Mbit (128K words x 16 bit) Static RAM (Cypress)
CY7C1041G - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1041GE - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1041GN - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1049GN - 4-Mbit (512K words x 8 bit) Static RAM (Cypress)
CY7C1061DV33 - 16-Mbit (1 M X 16) Static RAM (Cypress)
CY7C1061G - 16-Mbit (1 M words x 16 bit) Static RAM (Cypress)

Other Datasheets by Cypress Semiconductor

Published: Oct 19, 2006 |