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CY7C1522V18 Datasheet

72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture

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CY7C1522V18
CY7C1529V18
CY7C1523V18
CY7C1524V18
72-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
Features
Functional Description
• 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
• 300-MHz clock for high bandwidth
• 2-Word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) @ 300 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches
• Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
• Synchronous internally self-timed writes
• 1.8V core power supply with HSTL inputs and outputs
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–VDD)
• Available in 165-ball FBGA package (15 x 17 x 1.4 mm )
• Offered in lead-free and non lead-free packages
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement
Configuration
CY7C1522V18 – 8M x 8
CY7C1529V18 – 8M x 9
CY7C1523V18 – 4M x18
CY7C1524V18 – 2M x 36
The CY7C1522V18, CY7C1529V18, CY7C1523V18,
CY7C1524V18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II SIO (Double Data Rate Separate I/O)
architecture. The DDR-II SIO consists of two separate ports to
access the memory array. The Read port has dedicated Data
outputs and the Write port has dedicated Data inputs to
completely eliminate the need to “turn around’ the data bus
required with common I/O devices. Access to each port is
accomplished using a common address bus. Addresses for
Read and Write are latched on alternate rising edges of the
input (K) clock. Write data is registered on the rising edges of
both K and K. Read data is driven on the rising edges of C and
C if provided, or on the rising edge of K and K if C/C are not
provided. Each address location is associated with two 8-bit
words in the case of CY7C1522V18, two 9-bit words in the
case of CY7C1529V18, two 18-bit words in the case of
CY7C1523V18, and two 36-bit words in the case of
CY7C1524V18, that burst sequentially into or out of the
device.
Asynchronous inputs include output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to
the two output echo clocks CQ/CQ, eliminating the need for
separately capturing data from each individual DDR-II SIO
SRAM in the system design. Output data clocks (C/C) enable
maximum system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry
Selection Guide
Maximum Operating Frequency
Maximum Operating Current
300 MHz
300
900
278 MHz
278
860
250 MHz
250
800
200 MHz
200
700
167 MHz
167
650
Unit
MHz
mA
www.DataSheet4U.com
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-05564 Rev. *D
Revised June 1, 2006


Cypress Semiconductor Electronic Components Datasheet

CY7C1522V18 Datasheet

72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture

No Preview Available !

Logic Block Diagram (CY7C1522V18)
CY7C1522V18
CY7C1529V18
CY7C1523V18
CY7C1524V18
D[7: 0]
A(21:0)
22
K
K
DOFF
R/W
VREF
LD
NWS0
NWS1
8
Address
Register
CLK
Gen.
Control
Logic
Write
Data Reg
Write
Data Reg
4M x 8 4M x 8
Memory Memory
Array
Array
Read Data Reg.
16 8
8
Control
Logic
Reg.
Reg.
Reg. 8
8
LD
R/W
C
C
8
CQ
CQ
Q[7:0]
Logic Block Diagram (CY7C1529V18)
D[8: 0]
A(21:0)
22
K
K
DOFF
R/W
VREF
LD
BWS0
9
Address
Register
CLK
Gen.
Control
Logic
www.DataSheet4U.com
Write
Data Reg
Write
Data Reg
4M x 9 4M x 9
Memory Memory
Array
Array
Read Data Reg.
18 9
9
Control
Logic
Reg.
Reg.
Reg. 9
9
LD
R/W
C
C
9
CQ
CQ
Q[8: 0]
Document #: 38-05564 Rev. *D
Page 2 of 28


Part Number CY7C1522V18
Description 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
Maker Cypress Semiconductor
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CY7C1522V18 Datasheet PDF






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