CY7C1325G - 4-Mbit (256K 횞 18) Flow-Through Sync SRAM

Cypress (now Infineon)

Datasheet Details

Part number	CY7C1325G
Manufacturer	Cypress (now Infineon)
File Size	1.01 MB
Description	4-Mbit (256K 횞 18) Flow-Through Sync SRAM
Datasheet	CY7C1325G Datasheet

The CY7C1325G is a 256K × 18 synchronous cache RAM designed to interface with high speed microprocessors with minimum glue logic.

Maximum access delay from clock rise is 6.5 ns (133 MHz version).

CY7C1325G 4-Mbit (256K × 18) Flow-Through Sync SRAM 4-Mbit (256K × 18) Flow-Through Sync.

256K × 18 common I/O.
3.3 V core power supply (VDD).
2.5 V or 3.3 V I/O power supply (VDDQ).
Fast clock-to-output times.
6.5 ns (133 MHz version).
Provide high performance 2-1-1-1 access rate.
User selectable burst counter supporting Intel Pentium interleaved or linear burst sequences.
Separate processor and controller address strobes.
Synchronous self timed write.
Asynchronous output enable.
Available in Pb-free 100-pin TQFP package.

Part Number	Description
CY7C1325	256K x 18 Synchronous 3.3V Cache RAM
CY7C1325H	4-Mbit Flow-Through Sync SRAM
CY7C132	2K x 8 Dual-Port Static RAM
CY7C1320AV18	18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1320BV18	18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1320CV18	(CY7C1xxxCV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1320JV18	18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1320KV18	18-Mbit DDR II SRAM Two-Word Burst Architecture
CY7C1321BV18	1.8V Synchronous Pipelined SRAM
CY7C1321KV18	18-Mbit DDR II SRAM Four-Word Burst Architecture