CY7C1316BV18 Overview
Key Features
- 300-MHz clock for high bandwidth
- 2-Word burst for reducing address bus frequency
- Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Synchronous internally self-timed writes
- 1.8V core power supply with HSTL inputs and outputs
- Variable drive HSTL output buffers
