CY7C1313BV18
Key Features
- Separate Independent Read and Write data ports — Supports concurrent transactions
- 300-MHz clock for high bandwidth
- 4-Word Burst for reducing address bus frequency
- Double Data Rate (DDR) interfaces on both Read and Write ports (data transferred at 600 MHz) at 300 MHz
- Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only
- Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Single multiplexed address input bus latches address inputs for both Read and Write ports
- Separate Port Selects for depth expansion
- Synchronous internally self-timed writes
