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CY7C1311JV18 Datasheet

Manufacturer: Cypress (now Infineon)
CY7C1311JV18 datasheet preview

Datasheet Details

Part number CY7C1311JV18
Datasheet CY7C1311JV18_CypressSemiconductor.pdf
File Size 705.07 KB
Manufacturer Cypress (now Infineon)
Description (CY7C1x1xJV18) 18-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1311JV18 page 2 CY7C1311JV18 page 3

CY7C1311JV18 Overview

QDR II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations.

CY7C1311JV18 Key Features

  • 2M x 8 CY7C1911JV18
  • 2M x 9 CY7C1313JV18
  • 1M x 18 CY7C1315JV18
  • 512K x 36
  • Supports concurrent transactions 300 MHz Clock for High Bandwidth 4-word Burst for reducing Address Bus Frequency Double
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Part Number Description
CY7C1311AV18 (CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1311BV18 (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1311CV18 (CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1311KV18 18-Mbit QDR II SRAM Four-Word Burst Architecture
CY7C131 1K x 8 Dual-Port Static RAM
CY7C1310BV18 1.8V Synchronous Pipelined SRAM
CY7C1312BV18 1.8V Synchronous Pipelined SRAM
CY7C1312KV18 18-Mbit QDR II SRAM Two-Word Burst Architecture
CY7C1313AV18 (CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1313BV18 (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

CY7C1311JV18 Distributor

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