CY7C1311AV18 - (CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

Product Overview

Cypress Semiconductor

Part number	CY7C1311AV18
Manufacturer	Cypress Semiconductor
File Size	356.67 KB
Description	(CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
Datasheet	CY7C1311AV18 Datasheet
Additional preview pages of the CY7C1311AV18 datasheet.

The CY7C1311AV18/CY7C1313AV18/CY7C1315AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture.

Separate Independent Read and Write Data Ports.
Supports concurrent transactions.
250-MHz Clock for High Bandwidth.
4-Word Burst for reducing address bus frequency.
Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Two output clocks (C and C) accounts for clock skew and flight time mismatchi.

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Published: Dec 9, 2010 |