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Cypress Semiconductor Electronic Components Datasheet

CY7C1311AV18 Datasheet

(CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

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PRELIMINARY
CY7C1311AV18
CY7C1313AV18
CY7C1315AV18
18-Mb QDR™-II SRAM 4-Word Burst Architecture
Features
• Separate Independent Read and Write Data Ports
— Supports concurrent transactions
• 250-MHz Clock for High Bandwidth
• 4-Word Burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces on both Read and
Write Ports (data transferred at 500 MHz) at 250 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two output clocks (C and C) accounts for clock skew
and flight time mismatching
• Echo clocks (CQ and CQ) simplify data capture in high
speed systems
• Single multiplexed address input bus latches address
inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• Available in ×8, ×18, and ×36 configurations
• Full data coherancy providing most current data
• Core Vdd=1.8(+/-0.1V);I/O Vddq=1.4V to Vdd)
• 13 × 15 x 1.4 mm 1.0-mm pitch FBGA package, 165-ball
(11 × 15 matrix)
• Variable drive HSTL output buffers
• JTAG 1149.1 Compatible test access port
• Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1311AV18–2M x 8
CY7C1313AV18–1M x 18
CY7C1315AV18–512K x 36
Logic Block Diagram (CY7C1311AV18)
D[7:0] 8
Functional Description
The CY7C1311AV18/CY7C1313AV18/CY7C1315AV18 are
1.8V Synchronous Pipelined SRAMs, equipped with QDR-II
architecture. QDR-II architecture consists of two separate
ports to access the memory array. The Read port has
dedicated Data Outputs to support Read operations and the
Write Port has dedicated Data Inputs to support Write opera-
tions. QDR-II architecture has separate data inputs and data
outputs to completely eliminate the need to “turn-around” the
data bus required with common I/O devices. Access to each
port is accomplished through a common address bus.
Addresses for Read and Write addresses are latched on
alternate rising edges of the input (K) clock. Accesses to the
QDR-II Read and Write ports are completely independent of
one another. In order to maximize data throughput, both Read
and Write ports are equipped with Double Data Rate (DDR)
interfaces. Each address location is associated with four 8-bit
words (CY7C1311AV18) or 18-bit words (CY7C1313AV18) or
36-bit words (CY7C1315AV18) that burst sequentially into or
out of the device. Since data can be transferred into and out
of the device on every rising edge of both input clocks (K and
K and C and C), memory bandwidth is maximized while simpli-
fying system design by eliminating bus “turn-arounds”.
Depth expansion is accomplished with Port Selects for each
port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
A(18:0) 19
Address
Register
Write Write Write Write
Reg Reg Reg Reg
Address
Register
19 A(18:0)
K
K
DOFF
VREF
WPS
BWS[1:0]
CLK
Gen.
Control
Logic
Read Data Reg.
32 16
16
Control
Logic
Reg.
Reg.
Reg.
8
RPS
C
C
CQ
CQ
8
Q[7:0]
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05498 Rev. *A
Revised June 1, 2004
www.DataSheet.in


Cypress Semiconductor Electronic Components Datasheet

CY7C1311AV18 Datasheet

(CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

No Preview Available !

Logic Block Diagram (CY7C1313AV18)
D[17:0] 18
A(17:0) 18
K
K
DOFF
Address
Register
CLK
Gen.
VREF
WPS
BWS[1:0]
Control
Logic
Logic Block Diagram (CY7C1315AV18)
D[35:0] 36
A(16:0) 17
K
K
DOFF
VREF
WPS
BWS[3:0]
Address
Register
CLK
Gen.
Control
Logic
Selection Guide
Maximum Operating Frequency
Maximum Operating Current
PRELIMINARY
CY7C1311AV18
CY7C1313AV18
CY7C1315AV18
Write Write Write Write
Reg Reg Reg Reg
Address
Register
18 A(17:0)
Read Data Reg.
72 36
36
Control
Logic
Reg.
Reg.
RPS
C
C
CQ
CQ
Reg.
18 18 Q[17:0]
Write Write Write Write
Reg Reg Reg Reg
Address
Register
17 A(16:0)
Read Data Reg.
144 72
72
Control
Logic
Reg.
Reg.
RPS
C
C
CQ
CQ
Reg.
36 36 Q[35:0]
250 MHz
250
800
200 MHz
200
700
167 MHz
167
640
Unit
MHz
mA
Document #: 38-05498 Rev. *A
www.DataSheet.in
Page 2 of 22


Part Number CY7C1311AV18
Description (CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
Maker Cypress Semiconductor
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