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CY7C1264XV18 Datasheet

Manufacturer: Cypress (now Infineon)
CY7C1264XV18 datasheet preview

CY7C1264XV18 Details

Part number CY7C1264XV18
Datasheet CY7C1264XV18 CY7C1262XV18 Datasheet (PDF)
File Size 1.04 MB
Manufacturer Cypress (now Infineon)
Description 36-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture
CY7C1264XV18 page 2 CY7C1264XV18 page 3

CY7C1264XV18 Overview

CY7C1262XV18 CY7C1264XV18 36-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency).

CY7C1264XV18 Key Features

  • Separate independent read and write data ports
  • Supports concurrent transactions
  • 450 MHz clock for high bandwidth
  • Two-word burst for reducing address bus frequency
  • Double Data Rate (DDR) interfaces on both read and write ports
  • Available in 2.5 clock cycle latency
  • Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
  • Echo clocks (CQ and CQ) simplify data capture in high speed
  • Data valid pin (QVLD) to indicate valid data on the output

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