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CY7C1241V18 Datasheet

Manufacturer: Cypress (now Infineon)
CY7C1241V18 datasheet preview

Datasheet Details

Part number CY7C1241V18
Datasheet CY7C1241V18_CypressSemiconductor.pdf
File Size Direct Link
Manufacturer Cypress (now Infineon)
Description 36-Mbit QDR-II SRAM 4-Word Burst Architecture

CY7C1241V18 Overview

QDR-II+ architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to pletely eliminate the need to “turn around” the data bus required with mon IO devices.

CY7C1241V18 Key Features

  • Separate independent read and write data ports
  • Supports concurrent transactions
  • 300 MHz to 375 MHz clock for high bandwidth
  • 4-Word Burst for reducing address bus frequency
  • Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 750 MHz) at 375 MHz
  • Read latency of 2.0 clock cycles
  • Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems
  • Single multiplexed address input bus latches address inputs for both read and write ports
Cypress (now Infineon) logo - Manufacturer

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CY7C1241V18 Distributor

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