CY15B104Q f-ram equivalent, 4-mbit (512 k x 8) serial (spi) f-ram.
* 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8
* High-endurance 100 trillion (1014) read/writes
* 151-year data retentio.
requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critic.
The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years w.
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