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CY15B104Q - 4-Mbit (512 K x 8) Serial (SPI) F-RAM

Description

The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM.

Features

  • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (See the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Very fast serial peripheral interface (SPI).
  • Up to 40-MHz frequency.
  • Direct hardware replacement for serial flash and EEPROM.
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1).
  • Sophistic.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY15B104Q 4-Mbit (512 K × 8) Serial (SPI) F-RAM 4-Mbit (512 K × 8) Serial (SPI) F-RAM Features ■ 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast serial peripheral interface (SPI) ❐ Up to 40-MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) ■ Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array ■ Device ID ❐ Manufacturer ID and Product ID ■ L
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