Datasheet4U Logo Datasheet4U.com

CY14V104NA - 4-Mbit nvSRAM

Download the CY14V104NA datasheet PDF. This datasheet also covers the CY14V104LA variant, as both devices belong to the same 4-mbit nvsram family and are provided as variant models within a single manufacturer datasheet.

General Description

The Cypress CY14V104LA/CY14V104NA is a fast static RAM, with a non-volatile element in each memory cell.

The memory is organized as 512 K bytes of 8 bits each or 256 K words of 16 bits each.

Key Features

  • Functional.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY14V104LA_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY14V101PS 1-Mbit (128K x 8) Quad SPI nvSRAM Cypress
CY14ACS Quartz Crystal Low Profile HC49S Leaded Crystal Crystek Corporation
CY14ACSMD Quartz Crystal Surface Mount HC49S SMD Crystal Crystek Corporation
CY14APS Quartz Crystal Low Profile HC49S Leaded Crystal Crystek Corporation
CY14APSMD Quartz Crystal Surface Mount HC49S SMD Crystal Crystek Corporation

Other Datasheets by Cypress (Infineon)

Part Number Description
CY14V104LA 4-Mbit nvSRAM
CY14V101LA 1-Mbit nvSRAM
CY14V101NA 1-Mbit nvSRAM
CY14V101Q3 1 Mbit (128 K x 8) Serial SPI nvSRAM
CY14V101QS 1-Mbit (128K x 8) Quad SPI nvSRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY14V104LA CY14V104NA 4-Mbit (512 K × 8 / 256 K × 16) nvSRAM 4-Mbit (512 K × 8 / 256 K × 16) nvSRAM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Functional Description The Cypress CY14V104LA/CY14V104NA is a fast static RAM, with a non-volatile element in each memory cell. The memory is organized as 512 K bytes of 8 bits each or 256 K words of 16 bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down.