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CMF10120D - Silicon Carbide Power MOSFET

Features

  • Package VDS ID(MAX) = 1200 V = 24 A N-Channel Enhancement Mode RDS(on) = 160mΩ.
  • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits.
  • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Freq.

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Datasheet preview – CMF10120D

Datasheet Details

Part number CMF10120D
Manufacturer Cree
File Size 839.74 KB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet CMF10120D Datasheet
Additional preview pages of the CMF10120D datasheet.

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Full PDF Text Transcription

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CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET Features Package VDS ID(MAX) = 1200 V = 24 A N-Channel Enhancement Mode RDS(on) = 160mΩ • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits • • • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies Part Number CMF10120D Package TO-247-3 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 24 13 49 1.2 0.
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