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CMF10120D Datasheet Preview

CMF10120D Datasheet

Silicon Carbide Power MOSFET

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CMF10120D-Silicon Carbide Power MOSFET
Z-F MOSFETeTTM
VDS
= 1200 V
N-Channel Enhancement Mode ID (MAX) = 2 4 A
RDS(on)
= 160m
Features
Package
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefits
TO-247-3
Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Maximum Ratings (TC = 25˚C unless otherwise specified)
Part Number
CMF10120D
Package
TO-247-3
Symbol
Parameter
Value Unit
Test Conditions
Note
ID Continuous Drain Current
IDpulse Pulsed Drain Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
24 A VGS@20V, TC = 25˚C
13 VGS@20V, TC = 100˚C
Fig. 10
49 A Pulse width tP limited by Tjmax
TC = 25˚C
1.2 J ID = 10A, VDD = 50 V,
L = 20 mH
0.8 J tAR limited by Tjmax
Fig. 15
IAR Repetitive Avalanche Current
10 A ID = 10A, VDD = 50 V, L = 15 mH
tAR limited by Tjmax
VGS Gate Source Voltage
-5/+25 V
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
134
-55 to
+135
260
1
8.8
W TC=25˚C
˚C
Fig. 9
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 CMF10120D Rev. A
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CMF10120D Datasheet Preview

CMF10120D Datasheet

Silicon Carbide Power MOSFET

No Preview Available !

Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Unit
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs Transconductance
Ciss Input Capacitance
1200
2.4
3.1
1.8
2.3
0.5
5
160
190
4.2
3.9
928
3.5
4.1
50
150
0.25
200
240
V
V
V
V
μA
μA
m
S
Coss Output Capacitance
63 pF
Crss Reverse Transfer Capacitance
7.5
Eoss Coss Stored Energy
32 μJ
Test Conditions
VGS = 0V, ID = 50μA
VDS = VGS, ID = 0.5 mA
VDS = VGS, ID = 1.0 mA
VDS = VGS, ID = 0.5 mA, TJ = 135ºC
VDS = VGS, ID = 1.0 mA, TJ = 135ºC
VDS = 1200V, VGS = 0V
VDS = 1200V, VGS = 0V, TJ = 135ºC
VGS = 20V, VDS = 0V
VGS = 20V, ID = 10A
VGS = 20V, ID = 10A, TJ = 135ºC
VDS= 20V, IDS= 10A
VDS= 20V, IDS= 10A, TJ = 135ºC
VGS = 0V
VDS = 800V
f = 1MHz
VAC = 25mV
Note
Fig. 11
Fig. 3
Fig. 6
Fig. 13
Fig 14
td(on)v
tfv
td(off)V
trV
RG
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
Rise Time
Internal Gate Resistance
8.8
21
38
34
13.6
VDD = 800V, VGS = 0/20V
ID = 10A
ns
RG(ext) = 2.5Ω, RL = 40Ω
Timing relative to VDS
Ω f = 1MHz, VAC = 25mV
fig. 17
Built-in SiC Body Diode Characteristics
Symbol Parameter
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irrm Peak Reverse Recovery Current
Thermal Characteristics
Typ.
3.5
3.1
138
94
1.57
Max.
Unit
V
ns
nC
A
Test Conditions
VGS = -5V, IF=5A, TJ = 25ºC
VGS = -2V, IF=5A, TJ = 25ºC
VGS = -5V, IF=10A, TJ = 25ºC
VR = 800V,
diF/dt= 100A/μs
Note
Fig. 22
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
RθCS Case to Sink, w/ Thermal Compound
RθJA Thermal Resistance From Junction to Ambient
Typ.
0.66
0.25
Gate Charge Characteristics
Symbol Parameter
Qgs Gate to Source Charge
Qgd Gate to Drain Charge
Qg Gate Charge Total
Typ.
11.8
21.5
47.1
Max.
0.82
40
Unit
K/W
Test Conditions
Max.
Unit
Test Conditions
VDD = 800V, VGS = 0/20V
nC ID =10A
Per JEDEC24 pg 27
Note
Fig. 7
Note
Fig.12
2 CMF10120D Rev. A
Free Datasheet http://www.nDatasheet.com


Part Number CMF10120D
Description Silicon Carbide Power MOSFET
Maker Cree
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