CMF20120D - Silicon Carbide Power MOSFET

Features

Package VDS ID(MAX) R 1200 V 42 A 80mΩ DS(on) N-Channel Enhancement Mode.
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits.
Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency.

Cree

Datasheet Details

Part number	CMF20120D
Manufacturer	Cree
File Size	760.98 KB
Description	Silicon Carbide Power MOSFET
Datasheet	CMF20120D Datasheet
Additional preview pages of the CMF20120D datasheet.

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CMF10120D - Silicon Carbide Power MOSFET

Full PDF Text Transcription

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CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET Features Package VDS ID(MAX) R 1200 V 42 A 80mΩ DS(on) N-Channel Enhancement Mode • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits • • • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies UPS Part Number CMF20120D Package TO-247-3 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 42 24 90 2.2 1.

Published: Mar 12, 2014 |