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Comchip Technology

CSFL105 Datasheet Preview

CSFL105 Datasheet

SMD Super Fast Recovery Rectifier

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SMD Super Fast Recovery Rectifier
CSFL101 Thru CSFL105
Reverse Voltage: 50 - 600 Volts
Forward Current: 1.0 Amp
COMCHIP
www.comchiptech.com
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Super fast recovery time 35-50 nS
Built-in strain relief
Low forward voltage drop
DO-213AB (Plastic Melf)
0.022(0.55)
Max.
0.205(5.2)
0.195(4.8)
Mechanical Data
Case: DO-213AB molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.116 gram
0.105(2.67)
0.095(2.40)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
Parameter
Symbol
Max. Repetitive Peak Reverse Voltage VRRM
Max. DC Blocking Voltage
VDC
Max. RMS Voltage
VRMS
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
IFSM
Max. Average Forward Current
Io
Max. Instantaneous Forward Current
at 1.0 A
VF
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
Ta=100C
IR
Max. Thermal Resistance (Note 1)
R JA
Operating Junction Temperature
Tj
Storage Temperature
TSTG
CSFL
101
50
50
35
CSFL
102
100
100
70
CSFL
103
200
200
140
CSFL
104
400
400
280
30
0.95
1.0
35
1.3
5.0
100
50
-55 to +150
-55 to +150
CSFL
105
600
600
420
1.5
50
Unit
V
V
V
A
A
V
nS
uA
C/W
C
C
Note 1: Thermal resistance from junction to ambient.
MDS0210016B
Page 1




Comchip Technology

CSFL105 Datasheet Preview

CSFL105 Datasheet

SMD Super Fast Recovery Rectifier

No Preview Available !

SMD Super Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
Rating and Characteristic Curves (CSFL101 Thru CSFL105)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
1000
Tj=125 C
100
Tj=75 C
10
Tj=25 C
1.0
0.1
0 20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
10
CSFL101-103
1.0
CSFL104
0.1
CSFL105
0.01
0.001
0
Tj=25 C
Pulse width 300uS
4% duty cycle
0.2 0. 4 0.6 0.8 1.0 1.2 1.4
Forward Voltage (V)
Fig. 3 - Junction Capacitance
14
f=1.0MHz
12 Vsig=50mVp-p
10
8
6
4 Tj=25 C
2
0
0.1
1.0 10
Reverse Voltage (V)
100
Fig. 4 - Non Repetitive Forward
Surge Current
30
8.3mS Single Half Sine
Wave JEDEC methode
25
20
15
Tj=25 C
10
5
0
1
5 10
50 1 00
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
trr
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
Fig. 6 - Current Derating Curve
1.4
1.2
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
0.2
0 0 25 50 75 100 125 150 175
Ambient Temperature ( C)
MDS0210016B
Page 2


Part Number CSFL105
Description SMD Super Fast Recovery Rectifier
Maker Comchip Technology
Total Page 2 Pages
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